Полупроводники - Дискретные

МОП-транзистор, N Канал, 3.5 А, 950 В, 2 Ом, 10 В, 4 В...

Силовой МОП-транзистор, N Канал, 3.5 А, 1 кВ, 3.7 Ом, 10 В, 3.75 В...

МОП-транзистор, N Канал, 4.4 А, 500 В, 1.22 Ом, 10 В, 3.75 В...

Силовой МОП-транзистор, N Канал, 5 А, 600 В, 1.2 Ом, 10 В, 3.75 В...

Силовой МОП-транзистор, N Канал, 5 А, 600 В, 1.6 Ом, 10 В, 3.75 В...

Силовой МОП-транзистор, N Канал, 4.3 А, 800 В, 1.9 Ом, 10 В, 3.75 В.The STP5NK80Z is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance ..

Силовой МОП-транзистор, N Канал, 4.3 А, 800 В, 1.9 Ом, 10 В, 3.75 В.The STP5NK80ZFP is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistanc..

МОП-транзистор, N Канал, 60 А, 30 В, 9.5 мОм, 10 В, 1.5 В...

МОП-транзистор, N Канал, 60 А, 60 В, 16 мОм, 10 В, 2 В.The STP60NF06 is a 60V N-channel STripFET™ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high ..

МОП-транзистор, N Канал, 60 А, 60 В, 14 мОм, 10 В, 1 В.The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary..