Полупроводники - Дискретные

БТИЗ транзистор, 60 А, 2.5 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 40 А, 1.8 В, 167 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 50 А, 1.85 В, 375 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)...

IGBT, SINGLE, 1.2KV, 50A, TO-247-3...

БТИЗ транзистор, 60 А, 600 В, 260 Вт, 1.55 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 60 А, 2.1 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 60 А, 2.5 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов).The STGW30NC60WD is a 600V Ultra Fast IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in HF, SMPS and PF..

БТИЗ транзистор, 60 А, 1.85 В, 258 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 70 А, 1.7 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 63 А, 1.3 кВ, 250 Вт, 1.3 кВ, TO-247, 3 вывод(-ов).The STGW38IH130D is a 1300V Very Fast IGBT that developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited f..