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Полупроводники - Дискретные

Биполярный транзистор, Дарлингтона, PNP, -100 В, 125 Вт, -10 А, 500 hFE.The TIP147 is a complementary PNP Power Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance c..
116 ₽
Биполярный транзистор, PNP, -100 В, 125 Вт, -10 А, 500 hFE...
324 ₽
Биполярный транзистор, дарлингтона, PNP, 100 В, 90 Вт, 15 А, 1000 hFE...
196 ₽
Биполярный транзистор, Darlington, PNP, -100 В, 80 Вт, -10 А, 500 hFE...
0 ₽
Биполярный транзистор, PNP, 70 В, 90 Вт, 15 А, 20 hFE...
52 ₽
Биполярный транзистор, PNP, -60 В, 2.5 МГц, 90 Вт, -15 А, 5 hFE...
247 ₽
Биполярный транзистор, NPN, 60 В, 2 Вт, 1 А, 75 hFE...
76 ₽
Биполярный транзистор, NPN, 80 В, 3 МГц, 30 Вт, 1 А, 15 hFE...
29 ₽
BIPOLAR TRANSISTOR, NPN, 80V TO-220...
85 ₽
Биполярный транзистор, NPN, 100 В, 30 Вт, 1 А, 75 hFE.The TIP29C is a 100V NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation vol..
0 ₽
RF TRANSISTOR, NPN 100V 3MHZ TO-220...
113 ₽
Биполярный транзистор, NPN, 70 В, 90 Вт, 15 А, 70 hFE.The TIP3055 from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in epitaxial base planar technology and suitable for general purpose, power linear and switching applications...
0 ₽
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