Микроэлектроника

Быстрый / ультрабыстрый диод, Одиночный, 200 В, 8 А, 1 В, 20 нс, 150 А...

Быстрый / ультрабыстрый диод, Одиночный, 200 В, 18 А, 1.2 В, 20 нс, 175 А...

Displacement Sensor, 4.7 kohm, 50mm, ±30%, ±300 ppm/°C, UIPMA Series...

Displacement Sensor, 4.7 kohm, 150mm, ±30%, ±300 ppm/°C, UIPMA Series...

Displacement Sensor, 4.7 kohm, 250mm, ±30%, ±300 ppm/°C, UIPMA Series...

Массив биполярных транзисторов, дарлингтона, NPN, 50 В, 500 мА, 1000 hFE, DIP...

Массив биполярных транзисторов, дарлингтона, Двойной NPN, 50 В, 500 мА, 1000 hFE, SOIC...

Массив биполярных транзисторов, Двойной NPN, 50 В, 500 мА, 1000 hFE, SOIC...

Массив биполярных транзисторов, дарлингтона, NPN, 50 В, 500 мА, 1000 hFE, DIP.The ULN2002A is an NPN Darlington Array containing seven open collector Darlington pairs with common emitters. Each channel rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for induc..

Массив биполярных транзисторов, дарлингтона, NPN, 50 В, 500 мА, DIP.The ULN2002AN is an NPN Darlington Transistor Array each consists of seven NPN Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of a sing..

Массив биполярных транзисторов, дарлингтона, Двойной NPN, 50 В, 500 мА, 1000 hFE, SOIC...

Массив биполярных транзисторов, дарлингтона, NPN, 50 В, 500 мА, 1000 hFE, DIP.The ULN2003A from STMicroelectronics is a high voltage, high current seven darlington transistor array. Array contains seven open collector and darlington pairs with common emitters. Each channel rated at 500mA and can wit..