Brand: VISHAY
Силовой МОП-транзистор, N Канал, 3.1 А, 1 кВ, 5 Ом, 10 В, 4 В.The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1.7 А, 60 В, 200 мОм, 10 В, 4 В.The IRFD014PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case s..
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 2.5 А, 60 В, 100 мОм, 10 В, 4 В.The IRFD024PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case s..
99 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1 А, 100 В, 540 мОм, 10 В, 4 В.The IRFD110PBF is a N-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 1.3 А, 100 В, 270 мОм, 10 В, 4 В.The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case..
0 ₽
