Одиночные МОП-транзисторы

МОП-транзистор, N Канал, 163 А, 40 В, 0.0017 Ом, 10 В, 4 В...

МОП-транзистор, N Канал, 2.7 А, 150 В, 0.068 Ом, 10 В, 2 В.The SI4848DY-T1-GE3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.-55 to 150°C Operating temperature range Halogen-free..

МОП-транзистор, N Канал, 46 А, 200 В, 0.055 Ом, 10 В, 4 В.The IRFP260PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to me..

МОП-транзистор, N Канал, 3.1 А, 1 кВ, 5 Ом, 10 В, 4 В...

МОП-транзистор, P Канал, -19 А, -100 В, 0.2 Ом, -10 В, -4 В.The IRF9540SPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommoda..

МОП-транзистор, N Канал, 53.7 А, 150 В, 0.0148 Ом, 10 В, 4.5 В...

МОП-транзистор, N Канал, 6 А, 20 В, 0.016 Ом, 4.5 В, 1.5 В...