MOSFET Драйверы

ПЛИС/драйвер МОП-транзистора, высокой стороны и низкой стороны, питание 5.5В-17В, 650мА, 105нс.The L6387ED is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT device. The high-side (floating) sectio..

ПЛИС/драйвер МОП-транзистора, высокой стороны и низкой стороны, питание 9.6В-17В, 650мА, 160нс.The L6388ED is a high voltage low-side Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enab..

Микросхема драйвера, высокой стороны, питание 4.5В-36В, 5.4А, задержка 15мкс, POWERSSO-24.The VNQ5160K-E is a quad-channel High-side Driver made using STMicroelectronics VIPower™ M0-5 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active ..

ПЛИС/драйвер МОП-транзистора, высокой стороны и низкой стороны, питание 12.5В-20В, 430мА, 125нс.The L6390D is a full featured High Voltage Device manufactured with the BCD™ offline technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs. The high-side (floa..

ПЛИС/драйвер МОП-транзистора, высокой стороны и низкой стороны, питание -0.3В до 17В, 650мА, 105нс.The L6385E is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOSFET or IGBT device. The high-side (floating) ..

Драйвер МОП-транзистора, низкой стороны, питание 3.5В-5.5В, задержка 12мкс, SOIC-8.The VNL5300S5-E is an OMNIFET III fully protected Low-side Driver made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in ..

Драйвер МОП-транзистора, высокой стороны и низкой стороны, питание 10В-20В, задержка 125нс, SOIC-8...

ПЛИС/драйвер МОП-транзистора, высокой стороны, питание 26В, 2.3А, задержка 450нс, SOIC-14.The TD350E is an advanced Gate Driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eli..

ПЛИС/драйвер МОП-транзистора, высокой стороны и низкой стороны, питание 12.5В-20В, 430мА, 125нс.The L6392D is a high voltage High and Low-side Driver manufactured with the BCD OFF-LINE technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT. The high-side (floating..

Микросхема драйвера, высокой стороны, питание 5.5В-36В, 9А, задержка 30мкс, P2PAK5.The VN820B5-E is a monolithic High-side Driver device designed in STMicroelectronics VIPower® M0-3 technology. The driver is intended for driving any type of load with one side connected to ground. The active VCC pin ..