ИК Излучатели

ИК излучатель, 22 °, T-1 3/4 (5mm), 100 мА, 1.3 В, 800 нс, 800 нс.The TSUS5400 is an Infrared Emitting Diode with 950nm emitting diode in GaAs technology moulded in a blue-grey tinted plastic package. It is suitable for high pulse current operation and good spectral matching with Si photodetectors...

ИК излучатель, высокоскоростной, 38 °, T-1 3/4 (5mm), 100 мА, 1.45 В, 15 нс, 15 нс.The TSHG5510 is a 830nm high speed Infrared Emitting Diode in GaAlAs double hetero (DH) technology with high radiant power, high speed and moulded in a clear. This diode is suitable for high pulse current operation...

ИК излучатель, высокой мощности, 17 °, T-1 3/4 (5mm), 100 мА, 1.35 В, 800 нс, 800 нс.The TSAL6200 is a High Power Infrared Emitting Diode with high radiant power and high speed moulded in a blue-grey plastic package. It has 940nm emitting diode in GaAlAs multi quantum well (MQW) technology. Suitable..

ИК излучатель, высокоскоростной, 12 °, 200 мА, 20 нс, 20 нс...

ИК излучатель, 60 °, LCC, 100 мА, 1.3 В, 800 нс, 800 нс...

ИК излучатель, высокоскоростной, 10 °, T-1 3/4 (5mm), 100 мА, 1.4 В, 30 нс, 30 нс...

ИК излучатель, высокоскоростной, 18 °, T-1 (3mm), 100 мА, 1.9 В, 10 нс, 10 нс.The VSLY3850 is a 850nm high speed Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and moulded in a clear. It is suitable for high pulse curre..

ИК излучатель, высокоскоростной, 12 °, T-1 3/4 (5mm), 100 мА, 1.5 В, 600 нс, 600 нс...