Диоды

Карбидокремниевый диод Шоттки, Двойной Общий Катод, 1.2 кВ, 20 А, 57 нКл, TO-247.The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 38 А, 129 нКл, TO-220AC.The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolera..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 38 А, 129 нКл, TO-220AC.The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolera..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 20 А, 129 нКл, TO-263...

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 38 А, 129 нКл, TO-252.The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 20 А, 129 нКл, DO-247.The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 2 А, 15.6 нКл, TO-220AC.The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolera..

Карбидокремниевый диод Шоттки, Двойной Общий Катод, 1.2 кВ, 30 А, 94 нКл, TO-247.The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can..

Карбидокремниевый диод Шоттки, AEC-Q101 Series, Двойной Общий Катод, 650 В, 20 А, 62 нКл, TO-247...

Выпрямитель Шоттки, Одиночный, 600 В, 4 А, TO-252, 3 вывод(-ов), 1.9 В...

Карбидокремниевый диод Шоттки, SIC, Серия 600V, Одиночный, 600 В, 4 А, 3 нКл, TO-220AC...