Транзисторы - МОП-транзисторы

Силовой МОП-транзистор, N Канал, 3.6 А, 900 В, 1.1 Ом, 10 В, 3.75 В...

Силовой МОП-транзистор, N Канал, 6.5 А, 600 В, 0.63 Ом, 10 В, 3 В...

Силовой МОП-транзистор, N Канал, 7.5 А, 600 В, 0.55 Ом, 10 В, 3 В. Increased distance between pins (4.25 mm) Better protection versus high voltage arcing Cost saving solution avoiding the usage of expensive workarounds such as silicon potting, sleeves, leads-bending and sealant paste..

Силовой МОП-транзистор, N Канал, 11 А, 600 В, 0.35 Ом, 10 В, 3 В. Increased distance between pins (4.25 mm) Better protection versus high voltage arcing Cost saving solution avoiding the usage of expensive workarounds such as silicon potting, sleeves, leads-bending and sealant paste..

Силовой МОП-транзистор, N Канал, 13 А, 600 В, 0.255 Ом, 10 В, 3 В. Increased distance between pins (4.25 mm) Better protection versus high voltage arcing Cost saving solution avoiding the usage of expensive workarounds such as silicon potting, sleeves, leads-bending and sealant paste..

Силовой МОП-транзистор, N Канал, 18 А, 600 В, 0.168 Ом, 10 В, 3 В. Increased distance between pins (4.25 mm) Better protection versus high voltage arcing Cost saving solution avoiding the usage of expensive workarounds such as silicon potting, sleeves, leads-bending and sealant paste..

Силовой МОП-транзистор, N Канал, 7 А, 650 В, 0.6 Ом, 10 В, 3 В...

Силовой МОП-транзистор, N Канал, 2.5 А, 1.5 кВ, 6 Ом, 10 В, 4 В...

Силовой МОП-транзистор, N Канал, 4 А, 1.5 кВ, 5 Ом, 10 В, 4 В.The STFW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per ..

Силовой МОП-транзистор, N Канал, 46 А, 650 В, 0.049 Ом, 10 В, 4 В...

МОП-транзистор, N Канал, 180 А, 100 В, 0.0039 Ом, 10 В, 2 В...