МОП-транзисторы

МОП-транзистор, N Канал, 14 А, 100 В, 0.16 Ом, 10 В, 4 В...

МОП-транзистор, N Канал, 8.1 А, 250 В, 0.45 Ом, 10 В, 4 В...

МОП-транзистор, N Канал, 14 А, 250 В, 0.28 Ом, 10 В, 4 В.The IRF644SPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating..

МОП-транзистор, N Канал, 10 А, 400 В, 0.5 Ом, 10 В, 5 В...

MOSFET, N-CH, 500V, 5.3A, TO-220AB...

МОП-транзистор, N Канал, 8.7 А, 500 В, 0.7 Ом, 10 В, 5 В...

МОП-транзистор, P Канал, -19 А, -100 В, 0.2 Ом, -10 В, -4 В.The IRF9540SPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommoda..

МОП-транзистор, P Канал, -6.5 А, -200 В, 0.8 Ом, -10 В, -4 В...

МОП-транзистор, N Канал, 370 мА, 500 В, 3 Ом, 10 В, 4 В...

МОП-транзистор, N Канал, 4.5 А, 100 В, 0.54 Ом, 10 В, 4 В...

МОП-транзистор, N Канал, 23 А, 250 В, 0.14 Ом, 10 В, 4 В.The IRFP254PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to mee..

МОП-транзистор, N Канал, 46 А, 200 В, 0.055 Ом, 10 В, 4 В.The IRFP260PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to me..