Полупроводники - Дискретные

МОП-транзистор, N Канал, 30 А, 650 В, 0.087 Ом, 10 В, 4.5 В.ON Semiconductor's 650V SuperFET III series provides the highest performance Super Junction MOSFETs specifically designed for highest power density...

МОП-транзистор, N Канал, 24 А, 650 В, 0.1 Ом, 10 В, 4.5 В Новинка...

МОП-транзистор, N Канал, 17 А, 650 В, 0.152 Ом, 10 В, 4.5 В...

МОП-транзистор, N Канал, 12 А, 650 В, 0.21 Ом, 10 В, 4.5 В...

МОП-транзистор, N Канал, 30 А, 650 В, 0.079 Ом, 10 В, 4.5 В.ON Semiconductor's 650V SuperFET III series provides the highest performance Super Junction MOSFETs specifically designed for highest power density...

МОП-транзистор, N Канал, 24 А, 650 В, 0.105 Ом, 10 В, 4.5 В.ON Semiconductor's 650V SuperFET III series provides the highest performance Super Junction MOSFETs specifically designed for highest power density...

МОП-транзистор, N Канал, 24 А, 650 В, 0.105 Ом, 10 В, 4.5 В...

МОП-транзистор, N Канал, 19 А, 650 В, 0.14 Ом, 10 В, 4.5 В...

МОП-транзистор, N Канал, 17 А, 650 В, 0.159 Ом, 10 В, 4.5 В.ON Semiconductor's 650V SuperFET III series provides the highest performance Super Junction MOSFETs specifically designed for highest power density...

МОП-транзистор, N Канал, 17 А, 650 В, 0.159 Ом, 10 В, 4.5 В.ON Semiconductor's 650V SuperFET III series provides the highest performance Super Junction MOSFETs specifically designed for highest power density...

МОП-транзистор, N Канал, 7 А, 600 В, 0.53 Ом, 10 В, 5 В...

МОП-транзистор, N Канал, 24 А, 650 В, 0.105 Ом, 10 В, 4.5 В.IDK is easy to use and helps reduce product development effort and time to rapidly evaluate and prototypes end-to-end Iot solutions. Offering design flexibility with a wide choice of connectivity. Sensing, actuation and power management opt..