Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 30 А, 175 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..
0 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 100 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..
1 125 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 73 нКл, TO-247 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recov..
2 166 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Двойной Общий Катод, 1.2 кВ, 40 А, 120 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switch..
2 598 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 40 А, 119 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..
1 553 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 50 А, 252 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..
2 676 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 50 А, 147 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..
1 589 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 6 А, 22 нКл, QFN Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery ..
406 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 12 А, 40 нКл, QFN Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery..
571 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 9.2 А, 37 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..
616 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 6 А, 22 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching character..
352 ₽
Brand: ON SEMICONDUCTOR
Карбидокремниевый диод Шоттки, Одиночный, 650 В, 8 А, 27 нКл, TO-220.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching character..
390 ₽