Полупроводники - Дискретные

Биполярный транзистор, PNP, -250 В, 4 МГц, 200 Вт, -16 А, 8 hFE...

Биполярный транзистор, NPN, 250 В, 4 МГц, 200 Вт, 16 А, 8 hFE...

Биполярный транзистор, аудио, NPN, 260 В, 30 МГц, 200 Вт, 15 А, 175 hFE.The MJL3281AG is a NPN complementary Bipolar Power Transistor with superior gain linearity...

Биполярный транзистор, аудио, NPN, 350 В, 35 МГц, 230 Вт, 15 А, 80 hFE.The MJL4281AG is a bipolar complementary audio Power Transistor, designed for high power audio, disk head positioners and other linear applications...

Биполярный транзистор, PNP, -350 В, 35 МГц, 230 Вт, -15 А, 10 hFE.The MJL4302AG is a PNP Complementary Silicon Power Transistor for high power audio. It features low harmonic distortion...

Биполярный транзистор, PNP, -230 В, 30 МГц, 200 Вт, -15 А, 12 hFE...

Биполярный транзистор, NPN, 450 В, 13 МГц, 250 Вт, 30 А, 4 hFE...

Биполярный транзистор, аудио, PNP, -250 В, 4 МГц, 200 Вт, -30 А, 20 hFE...

Биполярный транзистор, аудио, NPN, 250 В, 4 МГц, 200 Вт, 2 А, 20 hFE...

Биполярный транзистор, аудио, PNP, -250 В, 4 МГц, 200 Вт, -16 А, 20 hFE.The MJW21195G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications...

Биполярный транзистор, универсальный, NPN, 250 В, 200 Вт, 16 А, 20 hFE.The MJW21196G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications...

Биполярный транзистор, NPN, 230 В, 30 МГц, 200 Вт, 15 А, 12 hFE...