Brand: ON SEMICONDUCTOR
БТИЗ транзистор, 50 А, 1.85 В, 192 Вт, 1.2 кВ, TO-247, 3 вывод(-ов).The NGTB25N120IHLWG is a 1200V (Insulated Gate Bipolar Transistor) IGBT features a robust and cost effective Field Stop (FS) trench construction. It provides superior performance in demanding switching applications, offering both lo..
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