Полупроводники - Дискретные

БТИЗ транзистор, 70 А, 1.7 В, 200 Вт, 600 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 63 А, 1.3 кВ, 250 Вт, 1.3 кВ, TO-247, 3 вывод(-ов).The STGW38IH130D is a 1300V Very Fast IGBT that developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited f..

БТИЗ транзистор, 80 А, 2.5 В, 250 Вт, 600 В, TO-247, 3 вывод(-ов).The STGW39NC60VD is a 600V Very Fast IGBT that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is well suited for UPS, high frequenc..

БТИЗ транзистор, 80 А, 1.6 В, 283 Вт, 650 В, TO-247, 3 вывод(-ов)...

БТИЗ транзистор, 80 А, 1.6 В, 283 Вт, 650 В, TO-247, 4 вывод(-ов)...

БТИЗ транзистор, 80 А, 2.8 В, 240 Вт, 1.2 кВ, TO-247, 3 вывод(-ов).The STGW40N120KD is a 1200V short-circuit Rugged IGBT with ultrafast diode that utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Improved swi..

БТИЗ транзистор, 70 А, 2.5 В, 250 Вт, 600 В, TO-247, 3 вывод(-ов)...

IGBT, SINGLE, 1.2KV, 80A, TO-247-3...

БТИЗ транзистор, 80 А, 1.8 В, 283 Вт, 600 В, TO-247, 3 вывод(-ов)...