Полупроводники - Дискретные

МОП-транзистор, P Канал, -52 А, -60 В, 0.0155 Ом, -10 В, -2 В.New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resista..

МОП-транзистор, P Канал, -30 А, -60 В, 0.013 Ом, -10 В, -2 В.The SQJ461EP-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature and low thermal resistance...

MOSFET Transistor, P Channel, -18 A, -40 V, 0.008 ohm, -10 V, -2 V 47X3732...

МОП-транзистор, P Канал, -32 А, -80 В, 0.021 Ом, -10 В, -2 В.The SQJ469EP-T1-GE3 is a -80V P-channel TrenchFET® Power MOSFET...

МОП-транзистор, P Канал, -32 А, -80 В, 0.021 Ом, -10 В, -2 В.New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistan..

МОП-транзистор, P Канал, -16 А, -80 В, 0.0651 Ом, -10 В, -2 В.New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resista..

Двойной МОП-транзистор, N и P Канал, 30 А, 40 В, 0.0061 Ом, 10 В, 2 В.New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on..

МОП-транзистор, N Канал, 30 А, 30 В, 0.0075 Ом, 10 В, 1.7 В...

МОП-транзистор, N Канал, 24 А, 60 В, 0.019 Ом, 10 В, 2 В...