Транзисторы - МОП-транзисторы

N CHANNEL MOSFET, 60V, 2.3A, TO-236, FULL REEL...

МОП-транзистор, N Канал, 2.3 А, 60 В, 0.13 Ом, 10 В, 3 В.The SI2308BDS-T1-GE3 is a N-channel TrenchFET® Power MOSFET with 175°C operating temperature...

МОП-транзистор, N Канал, 2.3 А, 60 В, 130 мОм, 10 В, 1 В...

MOSFET, P CHANNEL, -60V, -1.6A, SOT-23-3...

МОП-транзистор, P Канал, -1.6 А, -60 В, 285 мОм, -10 В, -1 В.The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology...

МОП-транзистор, N Канал, 3.9 А, 20 В, 0.025 Ом, 4.5 В, 850 мВ...

МОП-транзистор, N Канал, 6 А, 20 В, 26500 мкОм, 4.5 В, 450 мВ.The SI2312CDS-T1-GE3 is a 20V N-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch for portable applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages w..

MOSFET,N CHANNEL,20V,6A,DIODE,SOT23...

МОП-транзистор, N Канал, 4.9 А, 20 В, 33 мОм, 4.5 В, 950 мВ...

МОП-транзистор, P Канал, -3 А, -12 В, 0.04 Ом, -4.5 В, -900 мВ.The SI2315BDS-T1-E3 is a P-channel TrenchFET® Power MOSFET with power dissipation at 750mW...

P CHANNEL MOSFET...