Brand: ON SEMICONDUCTOR
ПТ с управляющим p-n-переходом (JFET), -30 В, 1.2 мА, 3 мА, -1.5 В, SOT-883, JFET...
20 ₽
Brand: ON SEMICONDUCTOR
ПТ с управляющим p-n-переходом (JFET), 40 В, 50 мкА, 130 мкА, 4 В, SOT-883, JFET...
0 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, NPN, 60 В, 80 Вт, 8 А, 200 hFE.The TIP100G is a NPN bipolar medium-power Darlington Transistor designed for general-purpose amplifier and low speed switching applications.Complementary device Monolithic construction with built-in base-emitter shunt resistors..
0 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, NPN, 80 В, 80 Вт, 8 А, 200 hFE.The TIP101G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications.Complementary device Monolithic construction with built-in base-emitter shunt resistors..
0 ₽
Brand: STMICROELECTRONICS
Биполярный транзистор, NPN, 100 В, 80 Вт, 8 А, 200 hFE.The TIP102 is a 100V Silicon Epitaxial Base NPN Complementary Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage result..
84 ₽
Brand: STMICROELECTRONICS
Биполярный транзистор, дарлингтона, PNP, -60 В, 2 Вт, 8 А, 20000 hFE...
102 ₽
