Диоды - Карбидокремниевые Шоттки

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 10 А, 62 нКл, TO-263 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse reco..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 25 нКл, TO-263 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recov..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 20 А, 120 нКл, TO-263 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse rec..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 30 А, 74 нКл, TO-263 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recov..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 8 А, 55 нКл, TO-252.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 34 нКл, TO-252.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 10 А, 25 нКл, TO-252 Новинка.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recov..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 10 А, 62 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 15 А, 95 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charact..

Карбидокремниевый диод Шоттки, Одиночный, 650 В, 16 А, 52 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characte..

Карбидокремниевый диод Шоттки, Одиночный, 1.2 кВ, 20 А, 120 нКл, TO-247.Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching charac..