FDC6303N

Двойной МОП-транзистор, Двойной N Канал, 680 мА, 25 В, 0.33 Ом, 4.5 В, 800 мВ Новинка.

The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

• Very low level gate drive requirements allowing direct operation in 3V circuits
• Gate-source Zener for ESD ruggedness
• Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
• 8V Gate-source voltage
• 0.68A Continuous drain/output current
• 2A Pulsed drain/output current