Биполярные Одиночные Массивы Транзисторов - BJT

Биполярный транзистор, NPN, 100 В, 3 МГц, 15 Вт, 3 А, 10 hFE...

Биполярный транзистор, NPN, 300 В, 50 МГц, 350 мВт, 500 мА, 40 hFE.The KST42 is a NPN Epitaxial Silicon Transistor offers 300V collector base voltage and 500mA collector current.High voltage transistor..

Биполярный транзистор, NPN, 60 В, 300 Вт, 50 А, 400 hFE.The MJ11028G is an NPN Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resist..

Биполярный транзистор, NPN, 100 В, 25 МГц, 20 Вт, 2 А, 200 hFE...