Brand: ON SEMICONDUCTOR
Массив биполярных транзисторов, дарлингтона, NPN, 50 В, 500 мА, 1000 hFE, SOIC...
110 ₽
Brand: ON SEMICONDUCTOR
Массив биполярных транзисторов, дарлингтона, NPN, 50 В, 500 мА, 1000 hFE, DIP...
0 ₽
Brand: ON SEMICONDUCTOR
Биполярный - РЧ транзистор, NPN, 3.5 В, 25 ГГц, 120 мВт, 40 мА, 50 hFE...
36 ₽
Brand: ON SEMICONDUCTOR
Биполярный - РЧ транзистор, NPN, 8 В, 16 ГГц, 400 мВт, 150 мА, 60 hFE...
26 ₽
Brand: STMICROELECTRONICS
Биполярный транзистор, NPN, 700 В, 58 Вт, 12 А, 4.5 hFE.The MD2001FX is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD series show improved sil..
307 ₽
Brand: STMICROELECTRONICS
Биполярный транзистор, NPN, 700 В, 62 Вт, 7 А, 28 hFE.The MD2310FX is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD series show improved silic..
0 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, PNP, -120 В, 200 Вт, -30 А, 1000 hFE.The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It funct..
1 587 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, дарлингтона, NPN, 120 В, 200 Вт, 30 А, 1000 hFE.The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emit..
858 ₽
