Brand: STMICROELECTRONICS
МОП-транзистор, N Канал, 3.5 А, 55 В, 60 мОм, 5 В, 2.5 В.The VND7NV04-E is a 55V Fully Auto Protected Power MOSFET made using VIPower™ M0 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvolt..
0 ₽
Brand: STMICROELECTRONICS
МОП-транзистор, N Канал, 6 А, 45 В, 0.06 Ом, 5 В, 500 мВ.The VND7NV04TR-E is a 45V Fully Auto Protected Power MOSFET made using VIPower™ M0 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvo..
326 ₽
Brand: STMICROELECTRONICS
МОП-транзистор, N Канал, 1.7 А, 45 В, 0.25 Ом, 5 В, 500 мВ.The VNN1NV04PTR-E is a 45V Fully Auto Protected Power MOSFET designed in VIPower M0 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvolta..
149 ₽
Brand: STMICROELECTRONICS
МОП-транзистор, N Канал, 10 А, 70 В, 100 мОм, 10 В, 3 В.The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz..
363 ₽
Brand: STMICROELECTRONICS
МОП-транзистор, N Канал, 10 А, 80 В, 50 мОм, 10 В, 3 В.The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp pr..
540 ₽
Brand: STMICROELECTRONICS
МОП-транзистор, N Канал, 18 А, 80 В, 28 мОм, 10 В, 3 В.The VNP35N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp pr..
768 ₽