N01S818HAT22I

SRAM, 1 Мбит, 128К x 8бит, 1.7В до 2.2В, TSSOP, 8 вывод(-ов).

The N01S818HAT22I is a 1MB ultra low power serial SRAM in 8 pin TSSOP package. This serial SRAM includes several integrated memory devices including 1MB serially accessed static random access memory and internally organized as 128Kwords by 8 bits. It is designed and fabricated using ON Semiconductor's advanced CMOS technology to provide both high speed performance and low power. The device operates with a single chip select (active-low CS) input and use a simple SPI protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with clock (SCK) to access data within the device. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used and in QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory. The serial SRAM is designed to interface directly with a standard SPI common on many standard microcontrollers in default state.

• Standard SPI interface and multiplex DUAL and QUAD interface
• Power supply range from 1.7V to 2.2V, data retention voltage of 1V and standby current of 1µA
• Very low typical standby current of less than 1µA and very low operating current of less than 10mA
• Simple serial interface, single bit SPI access & dual bit and quad-bit SPI like access
• Flexible operating modes (word mode, page mode, burst mode (full array))
• High frequency read and write operation with 20MHz clock frequency
• Built-in write protection (active-low CS high)
• High reliability, unlimited write cycles
• Operating current of 10mA (f = 20MHz, IOUT = 0, SPI/DUAL) & 10mA (f = 20MHz, IOUT = 0, QUAD)
• Operating temperature range from -40°C to 85°C