N01S830BAT22I

SRAM, 1 МБ, 128К x 8бит, 2.5В до 5.5В, TSSOP, 8 вывод(-ов).

The N01S830BAT22I is a 1Mb ultra-low power serial SRAM in 8 pin TSSOP package. The serial SRAM family includes several integrated memory devices including this 1 Mb serially accessed static random access memory, internally organized as 128K words by 8bits. The devices are designed and fabricated using advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within the device. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used and in QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory. The N01S830HA device has a battery back-up version to be used with a battery to retain data when power is lost.

• Power supply range from 2.5V to 5.5V
• Very low typical standby current is less than 4µA at +85°C
• Very low operating current is less than 10mA
• Single bit SPI access, dual bit and quad bit SPI like access serial interface
• Flexible operating modes such as word mode, page mode, burst mode (full array)
• High frequency read and write operation clock frequency up to 20MHz
• Built-in write protection
• High reliability unlimited write cycles
• Operating temperature range from -40°C to +85°C