Brand: ON SEMICONDUCTOR
Биполярный транзистор, универсальный, NPN, 140 В, 150 Вт, 16 А, 4 hFE.The 2N3773G is a 140V NPN PowerBase™ Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or sole..
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Brand: VISHAY
ПТ с управляющим p-n-переходом (JFET), полевой транзистор с p-n переходом, -70 В, 30 мкА, 90 мкА.The 2N4117A-E3 is a 70V N-channel JFET provides ultra-high input impedance. This device is specified with a 1pA limit and typically operate at 0.2pA. It makes them perfect choices for use as high-impedan..
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Brand: ON SEMICONDUCTOR
Биполярный транзистор, универсальный, NPN, 25 В, 300 МГц, 625 мВт, 200 мА, 300 hFE...
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Brand: VISHAY
ПТ с управляющим p-n-переходом (JFET), полевой транзистор с p-n переходом, -57 В, 200 мкА, 600 мкА.The 2N4338-E3 is a 57V N-channel JFET in a hermetically sealed case and is designed for sensitive amplifier stages at low to mid frequencies. Low cut-off voltages accommodate low-level power supplies a..
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Brand: ON SEMICONDUCTOR
Биполярный транзистор, универсальный, NPN, 40 В, 250 МГц, 625 мВт, 600 мА, 250 hFE.The 2N4401G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications...
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