Brand: TEXAS INSTRUMENTS
Артикул: LP395Z
Биполярный транзистор, NPN, 36 В, 130 мА.The LP395Z is a 36V fast monolithic ultra reliable Power Transistor with complete overload protection. This device, which act as high gain power transistor has included on the chip current limiting, power limiting and thermal overload protection making them v..
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Brand: STMICROELECTRONICS
Артикул: MD2001FX
Биполярный транзистор, NPN, 700 В, 58 Вт, 12 А, 4.5 hFE.The MD2001FX is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD series show improved sil..
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Brand: STMICROELECTRONICS
Артикул: MD2310FX
Биполярный транзистор, NPN, 700 В, 62 Вт, 7 А, 28 hFE.The MD2310FX is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD series show improved silic..
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Brand: ON SEMICONDUCTOR
Артикул: MJ11015G
Биполярный транзистор, PNP, -120 В, 200 Вт, -30 А, 1000 hFE.The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It funct..
1 479 ₽
Brand: ON SEMICONDUCTOR
Артикул: MJ11016G
Биполярный транзистор, дарлингтона, NPN, 120 В, 200 Вт, 30 А, 1000 hFE.The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emit..
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Brand: ON SEMICONDUCTOR
Артикул: MJ11032G
Биполярный транзистор, дарлингтона, NPN, 120 В, 300 Вт, 50 А, 18 hFE.The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications...
2 387 ₽
Brand: ON SEMICONDUCTOR
Артикул: MJ11033/
Биполярный транзистор, дарлингтона, PNP, 120 В, 300 Вт, 50 А, 400 hFE...
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Brand: ON SEMICONDUCTOR
Артикул: MJ11033G
Биполярный транзистор, PNP, -120 В, 300 Вт, -50 А, 400 hFE.The MJ11033G is a PNP Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resi..
2 174 ₽
Brand: ON SEMICONDUCTOR
Артикул: MJ15003G
Биполярный транзистор, аудио, NPN, 140 В, 2 МГц, 250 Вт, 20 А, 150 hFE.The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs...
1 094 ₽
Brand: ON SEMICONDUCTOR
Артикул: MJ15004G
Биполярный транзистор, аудио, PNP, -140 В, 2 МГц, 250 Вт, -20 А, 150 hFE.The MJ15004G is a -140V Silicon PNP Bipolar Complementary Power Transistor designed for high power audio, disk head positioners and other linear applications...
1 324 ₽
Brand: ON SEMICONDUCTOR
Артикул: MJ15015G
Биполярный транзистор, аудио, NPN, 120 В, 6 МГц, 180 Вт, 15 А, 70 hFE.The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC..
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