Brand: ON SEMICONDUCTOR
Биполярный транзистор, PNP, -120 В, 200 Вт, -30 А, 1000 hFE.The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It funct..
1 587 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, дарлингтона, NPN, 120 В, 200 Вт, 30 А, 1000 hFE.The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emit..
858 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, NPN, 60 В, 300 Вт, 50 А, 400 hFE.The MJ11028G is an NPN Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resist..
0 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, дарлингтона, NPN, 120 В, 300 Вт, 50 А, 18 hFE.The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications...
2 562 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, PNP, -120 В, 300 Вт, -50 А, 400 hFE.The MJ11033G is a PNP Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resi..
2 334 ₽