Транзисторы

Биполярный транзистор, аудио, NPN, 140 В, 2 МГц, 250 Вт, 20 А, 150 hFE.The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs...

Биполярный транзистор, аудио, PNP, -140 В, 2 МГц, 250 Вт, -20 А, 150 hFE.The MJ15004G is a -140V Silicon PNP Bipolar Complementary Power Transistor designed for high power audio, disk head positioners and other linear applications...

Биполярный транзистор, аудио, NPN, 120 В, 6 МГц, 180 Вт, 15 А, 70 hFE.The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC..

Биполярный транзистор, аудио, PNP, 120 В, 18 МГц, 180 Вт, 15 А, 70 hFE.The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such ..

Биполярный транзистор, аудио, NPN, 200 В, 4 МГц, 250 Вт, 16 А, 60 hFE.The MJ15022G is a 200V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications...

Биполярный транзистор, аудио, PNP, -200 В, 4 МГц, 250 Вт, -16 А, 60 hFE.The MJ15023G is a -200V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications...

Биполярный транзистор, аудио, NPN, 250 В, 4 МГц, 250 Вт, 16 А, 60 hFE.The MJ15024G is a 250V Silicon NPN Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications...

Биполярный транзистор, аудио, PNP, -250 В, 4 МГц, 250 Вт, -16 А, 60 hFE.The MJ15025G is a -250V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications...

Биполярный транзистор, аудио, PNP, 250 В, 4 МГц, 250 Вт, 16 А, 75 hFE.The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications...

Биполярный транзистор, аудио, NPN, 250 В, 4 МГц, 250 Вт, 16 А, 75 hFE.The MJ21194G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications...

Биполярный транзистор, PNP, -60 В, 2.5 МГц, 115 Вт, -15 А, 5 hFE.The MJ2955G is a -60V Silicon PNP Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications...