Транзисторы

Биполярный транзистор, NPN, 60 В, 50 МГц, 1.5 Вт, 3 А, 12 hFE...

Биполярный транзистор, NPN, 80 В, 50 МГц, 12.5 Вт, 3 А, 50 hFE...

Биполярный транзистор, NPN, 80 В, 50 МГц, 1.5 Вт, 3 А, 12 hFE.The MJE182G is a 80V NPN complementary plastic silicon Bipolar Transistor designed for low power audio amplifier and low current, high speed switching applications. The MJE172 (PNP) and MJE182 (NPN) are complementary devices...

Биполярный транзистор, NPN, 40 В, 65 МГц, 15 Вт, 5 А, 10 hFE...

Биполярный транзистор, PNP, -40 В, 65 МГц, 15 Вт, -5 А, 10 hFE...

Биполярный транзистор, аудио, NPN, 100 В, 40 МГц, 15 Вт, 4 А, 40 hFE.The MJE243G is a 100V Silicon NPN Complementary Plastic Power Transistor designed for low power audio amplifier as well as low current and high speed switching applications...

Биполярный транзистор, аудио, PNP, 100 В, 40 МГц, 1.5 Вт, 4 А, 40 hFE.The MJE253G is a -100V Silicon PNP Complementary Plastic Power Transistor designed for low power audio amplifier as well as low current and high speed switching applications...

Массив биполярных транзисторов, Двойной NPN, 100 В, 15 Вт, 2 А, 500 hFE, TO-225...

Биполярный транзистор, PNP, 60 В, 2 МГц, 75 Вт, 10 А, 20 hFE.The MJE2955T is a -60V Silicon Epitaxial Base PNP Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction los..

Биполярный транзистор, PNP, -60 В, 2 МГц, 75 Вт, -10 А, 20 hFE.The MJE2955TG is a 10A PNP bipolar Power Transistor designed for use in general-purpose amplifier and switching applications.Complementary device..

BIPOLAR TRANSISTOR, PNP -60V TO-220...