Транзисторы

Биполярный транзистор, NPN, 60 В, 2 МГц, 75 Вт, 3 А, 400 hFE...

Биполярный транзистор, NPN, 60 В, 2 МГц, 75 Вт, 10 А, 5 hFE.The MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices...

Биполярный транзистор, NPN, 300 В, 20.8 Вт, 500 мА, 240 hFE.The MJE340 is a 300V Silicon Planar NPN Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction lo..

Биполярный транзистор, универсальный, NPN, 300 В, 20 Вт, 500 мА, 240 hFE.The MJE340G is a 300V Silicon NPN Complementary Plastic Medium Power Transistor useful for high voltage general purpose applications. This transistor has thermo pad construction that provides high power dissipation rating for h..

Биполярный транзистор, PNP, -300 В, 20.8 Вт, -500 мА, 240 hFE.The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction..

Биполярный транзистор, универсальный, PNP, 300 В, 20 Вт, 500 мА, 240 hFE...

Биполярный транзистор, PNP, 40 В, 40 Вт, 4 А, 40 hFE...

Биполярный транзистор, NPN, 160 В, 1 МГц, 125 Вт, 16 А, 35 hFE...