Brand: VISHAY
МОП-транзистор, N Канал, 9.2 А, 100 В, 270 мОм, 10 В, 4 В.The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptanc..
80 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 28 А, 100 В, 77 мОм, 10 В, 4 В.The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance...
0 ₽
Brand: VISHAY
МОП-транзистор, N Канал, 3.3 А, 200 В, 1.5 Ом, 10 В, 4 В.The IRF610PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all comme..
48 ₽
Brand: STMICROELECTRONICS
МОП-транзистор, N Канал, 9 А, 200 В, 400 мОм, 10 В, 3 В.The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company's consolidated strip layout based MESH OVERLAY process which matches and improv..
0 ₽