Brand: STMICROELECTRONICS
Биполярный транзистор, дарлингтона, NPN, 300 В, 225 Вт, 100 А, 300 hFE...
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Brand: STMICROELECTRONICS
Биполярный транзистор, дарлингтона, NPN, 450 В, 250 Вт, 84 А, 120 hFE.The ESM6045DV is a NPN Darlington Power Module designed for welding equipment, SMPS and UPS as well as DC/DC and DC/AC converters. Fast switching times and very low saturation voltage resulting in reduced switching and conduction ..
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Brand: STMICROELECTRONICS
Биполярный транзистор, NPN, 800 В, 75 Вт, 24 А, 6.5 hFE.The HD1750FX is a 800V High Voltage NPN Power Transistor for high definition and new super-slim CRT displays. It is manufactured using diffused collector in planar technology adopting Enhance High Voltage Structure (EHVS1) developed to fit high..
727 ₽
Brand: TEXAS INSTRUMENTS
Биполярный транзистор, NPN, 36 В, 2.2 А.The LM395T is a 36V fast monolithic ultra reliable Power Transistor for low power applications. This device, which act as high gain power transistor has included on the chip current limiting, power limiting and thermal overload protection making them virtually..
1 056 ₽
Brand: TEXAS INSTRUMENTS
Биполярный транзистор, NPN, 36 В, 130 мА.The LP395Z is a 36V fast monolithic ultra reliable Power Transistor with complete overload protection. This device, which act as high gain power transistor has included on the chip current limiting, power limiting and thermal overload protection making them v..
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Brand: STMICROELECTRONICS
Биполярный транзистор, NPN, 700 В, 58 Вт, 12 А, 4.5 hFE.The MD2001FX is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD series show improved sil..
307 ₽
Brand: STMICROELECTRONICS
Биполярный транзистор, NPN, 700 В, 62 Вт, 7 А, 28 hFE.The MD2310FX is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD series show improved silic..
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Brand: ON SEMICONDUCTOR
Биполярный транзистор, PNP, -120 В, 200 Вт, -30 А, 1000 hFE.The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It funct..
1 587 ₽
Brand: ON SEMICONDUCTOR
Биполярный транзистор, дарлингтона, NPN, 120 В, 200 Вт, 30 А, 1000 hFE.The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emit..
858 ₽